Course on Radiation-Resistant Sensor Design
Online course of 300 h in Radiation-Resistant Sensor Design. 6 modules covering ESCC 22900 (total ionising dose testing), ESCC 25100 (single-event effects testing) and Geant4. Dedicated tutor and enrolment open.
Take the controls.
Run a real engineering trade-off from this programme. Move the sliders, watch the model react in real time and beat the challenge.
What you will be able to do
Explain the interaction of radiation with semiconductor materials.
Distinguish between total dose, displacement and single-event effects.
Compare radiation-resistant sensor technologies.
Apply hardening-by-design and hardening-by-process techniques.
Plan standardised test and qualification campaigns.
Interpret irradiation results to estimate service life.
Design a radiation-tolerant sensor for a specific application.
Who it's for
- Radiation-hardened electronics engineer looking to specialise in Radiation-Resistant Sensor Design.
- Sensor engineer for nuclear environments looking to specialise in Radiation-Resistant Sensor Design.
- Radiation effects specialist looking to specialise in Radiation-Resistant Sensor Design.
- Component qualification engineer looking to specialise in Radiation-Resistant Sensor Design.
- Microelectronics researcher looking to specialise in Radiation-Resistant Sensor Design.
- Nuclear instrumentation engineer looking to specialise in Radiation-Resistant Sensor Design.
- Engineering or science graduates looking to move into space industry.
What you'll work with
- ESCC 22900 (total ionising dose testing)
- ESCC 25100 (single-event effects testing)
- MIL-STD-883, method 1019 (total ionising dose)
- JESD57 (heavy-ion single-event testing)
- IEC 60780-323 / IEEE 323 (environmental qualification of equipment)
- ECSS-Q-ST-60-15C (radiation hardness assurance)
- ASTM E722 (equivalent 1 MeV neutron fluence in silicon)
6 modules · 300 h
1.1Types of ionising radiation1.2Total ionising dose (TID)1.3Displacement damage dose (DDD)1.4Single-event effects (SEE)1.5Neutron flux and fluence1.6Units: gray, rad(Si) and NIEL1.7Environments: reactor, space and accelerators1.8Mechanisms in oxides and semiconductors1.9Charge trapped at interfaces1.10Workshop: dose calculation in a reactor environment
2.1Threshold voltage shift in MOSFETs2.2Radiation-induced leakage current2.3Single-event upset and latch-up2.4Degradation of bipolar transistors2.5Enhanced low dose rate sensitivity (ELDRS)2.6Damage to photodiodes and CCDs2.7Darkening of optical fibres2.8Degradation of operational amplifiers2.9Post-irradiation annealing and recovery2.10Lab: analysis of irradiated I-V curves
3.1Silicon carbide (SiC) sensors3.2CVD diamond detectors3.3Fibre Bragg grating optical sensors3.4Strain gauges for high doses3.5In-core thermocouples and RTDs3.6Ionisation and fission chambers3.7Self-powered neutron detectors (SPND)3.8Radiation-tolerant MEMS sensors3.9Vacuum tube electronics3.10Case study: in-core reactor instrumentation
4.1Radiation hardening by design (RHBD)4.2Radiation hardening by process (RHBP)4.3Layout with enclosed-gate transistors4.4Triple modular redundancy (TMR)4.5Error-correcting codes4.6Local shielding and materials4.7Fault-tolerant architectures4.8Radiation-tolerant FPGAs and scrubbing4.9Remote electronics and zone separation4.10Practice: TMR design on an FPGA
5.1Testing with Co-60 sources5.2Neutron irradiation in a reactor5.3Proton and heavy-ion beams5.4MIL-STD-883 method 10195.5ESCC 22900 and ESCC 251005.6IEEE 323 and IEC 60780 for nuclear5.7Equipment qualification for accident conditions5.8Statistical analysis of results5.9Test plan and traceability5.10Lab: total dose test plan
6.1Environment specification and requirements6.2Selecting the measurement principle6.3Sensor element design6.4Conditioning electronics6.5Hardening strategy6.6Degradation simulation6.7Qualification plan6.8Cost and reliability analysis6.9Report and presentation6.10Final review with the tutor
How you'll learn
100% online training on the SEIUM campus, with downloadable materials, recorded classes and a dedicated technical tutor. No fixed timetable: students progress at their own pace within the intake period, making it easy to combine with work.
Each module combines theory, guided reading of the original standards and applied exercises. The software used is Geant4, SRIM/TRIM, OMERE, LTspice, Synopsys TCAD, in free, academic or trial versions. Testing is studied through real procedures from irradiation with cobalt-60 sources, heavy-ion beam testing, neutron displacement testing. Assessment is continuous for each module, plus a final capstone project.
Build it end to end
Your final project follows the real engineering workflow, step by step, reviewed by your tutor.
Explain the interaction of radiation with semiconductor materials.
Distinguish between total dose, displacement and single-event effects.
Compare radiation-resistant sensor technologies.
Apply hardening-by-design and hardening-by-process techniques.
Plan standardised test and qualification campaigns.
Where this takes you
Requirements
- No previous qualification is required.
- An internet connection and a computer able to run the programme software.
- A level of English sufficient to read technical standards.
Ready to start?
Send your application today. Our admissions team replies within 72 hours with your study plan and funding options.
Frequently asked questions
The programme totals 300 hours spread over 3 to 5 months. That is an average of 10 to 15 hours per week, compatible with a full-time job.
You will work with Geant4, SRIM/TRIM, OMERE, LTspice, Synopsys TCAD. Free, academic or trial versions are used, and your tutor will point out a free alternative where one exists.
A SEIUM Institute diploma, awarded on passing the continuous assessment and the capstone project. It is SEIUM's own qualification, not an official state-accredited degree.
Yes. Modules passed in a course or postgraduate diploma in the same area are recognised in the higher programme. Check the recognition policy when you enrol.
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